晶体管-场效应晶体管,MOSFET-射频

图片 型号 库存 价格 数量 规格书 Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
MRFE6VP5150GNR1

MRFE6VP5150GNR1

FET RF 2CH 133V 230MHZ TO-270 GW

NXP USA Inc.
3,013 -

立即询盘

MRFE6VP5150GNR1

规格书

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 230MHz 26.1dB 50 V - - 100 mA 150W 133 V
MRFE6VP5600HR5

MRFE6VP5600HR5

FET RF 2CH 130V 230MHZ NI1230

NXP USA Inc.
2,447 -

立即询盘

MRFE6VP5600HR5

规格书

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 230MHz 25dB 50 V - - 100 mA 600W 130 V
BF909AR215

BF909AR215

MOSFET N-CH SOT-143R

NXP USA Inc.
2,251 -

立即询盘

BF909AR215

规格书

Bulk - Active MESFET Dual Gate 800MHz - - 40mA 2dB - - 7 V
BF909A215

BF909A215

MOSFET N-CH SOT-143B

NXP USA Inc.
2,306 -

立即询盘

BF909A215

规格书

Bulk - Active N-Channel Dual Gate 800MHz - - 40mA 2dB - - 7 V
CLF1G0035-200PU

CLF1G0035-200PU

RF TRANSISTOR

NXP USA Inc.
2,954 -

立即询盘

Tray - Obsolete - - - - - - - - -
BF1108215

BF1108215

RF MOSFET N-CH SOT143B

NXP USA Inc.
2,435 -

立即询盘

Bulk - Active N-Channel - - - 10mA - - - 3 V
MRFX1K80NR5578

MRFX1K80NR5578

RF POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.
2,549 -

立即询盘

MRFX1K80NR5578

规格书

Bulk - Active LDMOS (Dual) 1.8MHz ~ 400MHz 24.4dB 65 V 100mA - 100 mA 1800W 179 V
MRFE6VP5150NR1

MRFE6VP5150NR1

RF MOSFET LDMOS DL 50V TO270

NXP USA Inc.
3,272 -

立即询盘

MRFE6VP5150NR1

规格书

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 230MHz 26.1dB 50 V - - 100 mA 150W 133 V
BLF8G10LS-160,112

BLF8G10LS-160,112

RF PFET, 1-ELEMENT, ULTRA HIGH F

NXP USA Inc.
3,043 -

立即询盘

BLF8G10LS-160,112

规格书

Tube - Active LDMOS 920MHz ~ 960MHz 19.7dB 30 V 5µA - 1.1 A 35W 65 V
BLF6G27-75,112

BLF6G27-75,112

RF TRANSISTOR

NXP USA Inc.
3,644 -

立即询盘

BLF6G27-75,112

规格书

Tray - Obsolete LDMOS - - 28 V 18A - 600 mA 9W 65 V
BLF6G15L-250PBRN,1

BLF6G15L-250PBRN,1

RF PFET, 3-ELEMENT, L BAND, SILI

NXP USA Inc.
3,167 -

立即询盘

BLF6G15L-250PBRN,1

规格书

Bulk - Active LDMOS 1.47GHz ~ 1.51GHz 18.5dB 28 V 64A - 1.41 A 60W 65 V
MRF6V12250HR5

MRF6V12250HR5

FET RF 100V 1.03GHZ NI-780

NXP USA Inc.
2,862 -

立即询盘

MRF6V12250HR5

规格书

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 1.03GHz 20.3dB 50 V - - 100 mA 275W 100 V
MMRF1317HR5

MMRF1317HR5

TRANS 1030MHZ 1550W PEAK 50V

NXP USA Inc.
3,564 -

立即询盘

MMRF1317HR5

规格书

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 1.03GHz 18.2dB 50 V - - 100 mA 1300W 105 V
MRFX035HR5

MRFX035HR5

TRANS LDMOS 35W 512 MHZ 65V

NXP USA Inc.
2,738 -

立即询盘

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 1.8MHz ~ 512MHz 24.8dB 65 V 10µA - 15 mA 35W 179 V
A3G26D055N-2515

A3G26D055N-2515

RF REFERENCE CIRCUIT 55W 2515MHZ

NXP USA Inc.
3,382 -

立即询盘

A3G26D055N-2515

规格书

Bulk - Active GaN 100MHz ~ 2.69GHz 13.9dB 48 V - - 40 mA 8W 125 V
MMRF1008HR5

MMRF1008HR5

FET RF 100V 1.03GHZ NI-780

NXP USA Inc.
2,053 -

立即询盘

MMRF1008HR5

规格书

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 1.03GHz 20.3dB 50 V - - 100 mA 275W 100 V
A3G26D055N-2110

A3G26D055N-2110

RF REFERENCE CIRCUIT 25W 2110-22

NXP USA Inc.
3,709 -

立即询盘

A3G26D055N-2110

规格书

Bulk - Active GaN 100MHz ~ 2.69GHz 13.9dB 48 V - - 40 mA 8W 125 V
A3G26D055N-1805

A3G26D055N-1805

RF REFERENCE CIRCUIT 25W 1805-18

NXP USA Inc.
3,684 -

立即询盘

A3G26D055N-1805

规格书

Bulk - Active GaN 100MHz ~ 2.69GHz 13.9dB 48 V - - 40 mA 8W 125 V
CLF1G0035-100,112

CLF1G0035-100,112

RF SMALL SIGNAL FIELD-EFFECT TRA

NXP USA Inc.
2,760 -

立即询盘

CLF1G0035-100,112

规格书

Bulk - Active GaN HEMT 3GHz 12dB 50 V - - 330 mA 100W 150 V
BLF2425M8LS140112

BLF2425M8LS140112

NOW AMPLEON, BLF2425M8LS140, POW

NXP USA Inc.
3,778 -

立即询盘

Bulk - Active LDMOS 2.45GHz 19dB 28 V - - 1.3 A 140W 65 V
1500+
1500+ 日均询价量
20,000.000
20,000.000 电子元器件
1800+
1800+ 品牌
15,000+
15,000+ 库存仓库
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