晶体管-场效应晶体管,MOSFET-单个

图片 型号 库存 价格 数量 规格书 Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP15N65M5

STP15N65M5

MOSFET N CH 650V 11A TO220

STMicroelectronics
1,000 -

立即询盘

STP15N65M5

规格书

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 340mOhm @ 5.5A, 10V 5V @ 250µA 22 nC @ 10 V ±25V 810 pF @ 100 V - 125W (Tc) 150°C (TJ) Through Hole
NVHL050N65S3HF

NVHL050N65S3HF

MOSFET N-CH 650V 58A TO247-3

onsemi
100 -

立即询盘

NVHL050N65S3HF

规格书

Tube Automotive, AEC-Q101, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 119 nC @ 10 V ±30V 4880 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK31Z60X,S1F

TK31Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,553 -

立即询盘

TK31Z60X,S1F

规格书

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
NTHLD040N65S3HF

NTHLD040N65S3HF

MOSFET N-CH 650V 65A TO247

onsemi
2,685 -

立即询盘

NTHLD040N65S3HF

规格书

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 159 nC @ 10 V ±30V 5945 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW58N60DM2AG

STW58N60DM2AG

MOSFET N-CH 600V 50A TO247

STMicroelectronics
2,523 -

立即询盘

STW58N60DM2AG

规格书

Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 250µA 90 nC @ 10 V ±25V 4100 pF @ 100 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP7N95K3

STP7N95K3

MOSFET N-CH 950V 7.2A TO220-3

STMicroelectronics
320 -

立即询盘

STP7N95K3

规格书

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 950 V 7.2A (Tc) 10V 1.35Ohm @ 3.6A, 10V 5V @ 100µA 34 nC @ 10 V ±30V 1031 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW35N60C3FKSA1

SPW35N60C3FKSA1

MOSFET N-CH 650V 34.6A TO247-3

Infineon Technologies
3,156 -

立即询盘

SPW35N60C3FKSA1

规格书

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 34.6A (Tc) 10V 100mOhm @ 21.9A, 10V 3.9V @ 1.9mA 200 nC @ 10 V ±20V 4500 pF @ 25 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZA65R107M1HXKSA1

IMZA65R107M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
307 -

立即询盘

Tube - Active - - - 20A (Tc) - - - - - - - - - -
APT34F60B

APT34F60B

MOSFET N-CH 600V 36A TO247

Microchip Technology
3,422 -

立即询盘

APT34F60B

规格书

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 210mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT34M60S

APT34M60S

MOSFET N-CH 600V 36A D3PAK

Microchip Technology
2,876 -

立即询盘

APT34M60S

规格书

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMZA65R072M1HXKSA1

IMZA65R072M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
288 -

立即询盘

Tube - Active - - - 28A (Tc) - - - - - - - - - -
TK62Z60X,S1F

TK62Z60X,S1F

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
2,802 -

立即询盘

TK62Z60X,S1F

规格书

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C Through Hole
APT5010LFLLG

APT5010LFLLG

MOSFET N-CH 500V 46A TO264

Microchip Technology
3,811 -

立即询盘

APT5010LFLLG

规格书

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR64N50P

IXFR64N50P

MOSFET N-CH 500V 35A ISOPLUS247

IXYS
3,533 -

立即询盘

IXFR64N50P

规格书

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Tc) 10V 95mOhm @ 32A, 10V 5.5V @ 8mA 150 nC @ 10 V ±30V 8700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL033N65S3HF

NTHL033N65S3HF

MOSFET N-CH 650V 70A TO247-3

onsemi
3,103 -

立即询盘

NTHL033N65S3HF

规格书

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 10V 33mOhm @ 35A, 10V 5V @ 2.5mA 188 nC @ 10 V ±30V 6720 pF @ 400 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT7F120B

APT7F120B

MOSFET N-CH 1200V 7A TO247

Microchip Technology
3,635 -

立即询盘

APT7F120B

规格书

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 7A (Tc) 10V 2.9Ohm @ 3A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2565 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC040SMA120S

MSC040SMA120S

SICFET N-CH 1200V 64A TO268

Microchip Technology
2,862 -

立即询盘

MSC040SMA120S

规格书

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 303W -55°C ~ 175°C (TJ) Surface Mount
IXFX20N120P

IXFX20N120P

MOSFET N-CH 1200V 20A PLUS247-3

IXYS
2,775 -

立即询盘

IXFX20N120P

规格书

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT1201R2BLLG

APT1201R2BLLG

MOSFET N-CH 1200V 12A TO247

Microchip Technology
3,474 -

立即询盘

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.2Ohm @ 6A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 3100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL100N50P

IXFL100N50P

MOSFET N-CH 500V 70A ISOPLUS264

IXYS
2,885 -

立即询盘

IXFL100N50P

规格书

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 70A (Tc) 10V 52mOhm @ 50A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 20000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ 日均询价量
20,000.000
20,000.000 电子元器件
1800+
1800+ 品牌
15,000+
15,000+ 库存仓库
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