图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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BSC030N03MSGBSC030N03 - 12V-300V N-CHANNEL P Infineon Technologies |
3,099 | - |
立即询盘 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPW60R031CFD7600V COOLMOS N-CHANNEL POWER MOS Infineon Technologies |
3,956 | - |
立即询盘 |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IPW65R019C775A, 650V, 0.019OHM, N-CHANNEL M Infineon Technologies |
2,815 | - |
立即询盘 |
![]() 规格书 |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPB80N06S2L-11IPB80N06 - 55V-60V N-CHANNEL AUT Infineon Technologies |
3,900 | - |
立即询盘 |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 11mOhm @ 40A, 10V | 2V @ 93µA | 80 nC @ 10 V | ±20V | 2075 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPN70R1K5CESMALL SIGNAL FIELD-EFFECT TRANSI Infineon Technologies |
2,148 | - |
立即询盘 |
![]() 规格书 |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 5.4A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IPD25N06S4L-30ATMA2IPD25N06 - 55V-60V N-CHANNEL AUT Infineon Technologies |
2,407 | - |
立即询盘 |
![]() 规格书 |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP60R125CPPOWER FIELD-EFFECT TRANSISTOR, 2 Infineon Technologies |
3,006 | - |
立即询盘 |
![]() 规格书 |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP60R600P6POWER FIELD-EFFECT TRANSISTOR, 6 Infineon Technologies |
2,495 | - |
立即询盘 |
![]() 规格书 |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPW60R125P6POWER FIELD-EFFECT TRANSISTOR Infineon Technologies |
3,799 | - |
立即询盘 |
![]() 规格书 |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPAN80R450P7XKSA1MOSFET N-CH 800V 11A TO220-3-31 Infineon Technologies |
145 | - |
立即询盘 |
![]() 规格书 |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24 nC @ 10 V | ±20V | 770 pF @ 500 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP80N03S4L03AKSA1MOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
560 | - |
立即询盘 |
![]() 规格书 |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.7mOhm @ 80A, 10V | 2.2V @ 90µA | 140 nC @ 10 V | ±16V | 9750 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP65R190C7FKSA1MOSFET N-CH 650V 13A TO220-3 Infineon Technologies |
3,918 | - |
立即询盘 |
![]() 规格书 |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPAN80R280P7XKSA1MOSFET N-CH 800V 17A TO220 Infineon Technologies |
2,562 | - |
立即询盘 |
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Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36 nC @ 10 V | ±20V | 1200 pF @ 500 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SP000685844IPP60R125C6XKSA1 - COOLMOS N-CHA Infineon Technologies |
2,735 | - |
立即询盘 |
![]() 规格书 |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPI041N12N3GIPI041N12 - 12V-300V N-CHANNEL P Infineon Technologies |
2,402 | - |
立即询盘 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPP60R125C6POWER FIELD-EFFECT TRANSISTOR, 3 Infineon Technologies |
3,024 | - |
立即询盘 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPI075N15N3GOPTLMOS N-CHANNEL POWER MOSFET Infineon Technologies |
2,332 | - |
立即询盘 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPA60R125CFD7XKSA1MOSFET N-CH 600V 11A TO220 Infineon Technologies |
2,513 | - |
立即询盘 |
![]() 规格书 |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36 nC @ 10 V | ±20V | 1503 pF @ 400 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPA60R160P6POWER FIELD-EFFECT TRANSISTOR Infineon Technologies |
3,411 | - |
立即询盘 |
![]() 规格书 |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPA90R800C3MOSFET N-CH 900V 6.9A TO220 Infineon Technologies |
3,367 | - |
立即询盘 |
![]() 规格书 |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | - | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |