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晶体管-IGBT-模块

型号	库存	价格	数量	规格书	Packaging	Series	ProductStatus	IGBTType	Configuration	Voltage-CollectorEmitterBreakdown(Max)	Current-Collector(Ic)(Max)	Power-Max	Vce(on)(Max)@VgeIc	Current-CollectorCutoff(Max)	InputCapacitance(Cies)@Vce	Input	NTCThermistor	OperatingTemperature	MountingType
F4150R06KL4BOSA1 LOW POWER ECONO Infineon Technologies	3,170	-	立即询盘	规格书	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
FD800R17KF6CB2NOSA1 FD800R17KF6C_B2 - 1700V IGBT MOD Infineon Technologies	3,987	-	立即询盘	规格书	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
FS25R12KE3GBOSA1 FS25R12 - IGBT MODULE Infineon Technologies	2,110	-	立即询盘	规格书	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
FF600R12ME4B11BPSA1 FF600R12 - IGBT MODULE Infineon Technologies	2,449	-	立即询盘	规格书	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
F475R12KS4B11BOSA1 LOW POWER ECONO Infineon Technologies	3,332	-	立即询盘	规格书	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
BSM50GD120DN2BOSA1 LOW POWER ECONO Infineon Technologies	2,105	-	立即询盘	规格书	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
FS50R06KE3BOSA1 FS50R06 - IGBT MODULE Infineon Technologies	3,548	-	立即询盘	规格书	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
BSM15GP120BOSA1 LOW POWER ECONO Infineon Technologies	3,942	-	立即询盘	规格书	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
CPV362M4F IGBT MODULE 600V 8.8A 23W IMS-2 Vishay General Semiconductor - Diodes Division	2,544	-	立即询盘		Bulk	-	Active	-	Three Phase Inverter	600 V	8.8 A	23 W	1.66V @ 15V, 8.8A	250 µA	340 pF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
CPV362M4K IGBT MODULE 600V 5.7A 23W IMS-2 Vishay General Semiconductor - Diodes Division	3,386	-	立即询盘	规格书	Bulk	-	Active	-	Three Phase Inverter	600 V	5.7 A	23 W	1.93V @ 15V, 3A	250 µA	450 pF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
CPV362M4U IGBT MODULE 600V 7.2A 23W IMS-2 Vishay General Semiconductor - Diodes Division	3,300	-	立即询盘	规格书	Bulk	-	Active	-	Three Phase Inverter	600 V	7.2 A	23 W	1.95V @ 15V, 7.2A	250 µA	530 pF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
CPV363M4F IGBT MODULE 600V 16A 36W IMS-2 Vishay General Semiconductor - Diodes Division	2,342	-	立即询盘	规格书	-	-	Obsolete	-	Three Phase Inverter	600 V	16 A	36 W	1.63V @ 15V, 16A	250 µA	1.1 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
CPV363M4K IGBT MODULE 600V 11A 36W IMS-2 Vishay General Semiconductor - Diodes Division	3,809	-	立即询盘	规格书	Bulk	-	Active	-	Three Phase Inverter	600 V	11 A	36 W	2V @ 15V, 11A	250 µA	740 pF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
CPV363M4U IGBT MODULE 600V 13A 36W IMS-2 Vishay General Semiconductor - Diodes Division	2,018	-	立即询盘	规格书	Bulk	-	Active	-	Three Phase Inverter	600 V	13 A	36 W	2V @ 15V, 13A	250 µA	1.1 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
CPV364M4F IGBT MODULE 600V 27A 63W IMS-2 Vishay General Semiconductor - Diodes Division	2,663	-	立即询盘		-	-	Obsolete	-	Three Phase Inverter	600 V	27 A	63 W	1.6V @ 15V, 27A	250 µA	2.2 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
VS-CPV364M4KPBF IGBT MODULE 600V 24A 63W IMS-2 Vishay General Semiconductor - Diodes Division	3,264	-	立即询盘	规格书	Bulk	-	Obsolete	-	Three Phase Inverter	600 V	24 A	63 W	1.8V @ 15V, 24A	250 µA	1.6 nF @ 30 V	Standard	No	-55°C ~ 150°C (TJ)	Through Hole
50MT060WH IGBT MODULE 600V 114A 658W 12MTP Vishay General Semiconductor - Diodes Division	2,327	-	立即询盘	规格书	-	-	Obsolete	PT	Half Bridge	600 V	114 A	658 W	3.2V @ 15V, 100A	400 µA	7.1 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
50MT060ULS IGBT MODULE 600V 100A 445W 10MTP Vishay General Semiconductor - Diodes Division	3,846	-	立即询盘	规格书	-	-	Obsolete	-	Single	600 V	100 A	445 W	2.55V @ 15V, 100A	250 µA	14.7 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
GB35XF120K IGBT MODULE 1200V 50A 284W Vishay General Semiconductor - Diodes Division	3,710	-	立即询盘	规格书	-	-	Obsolete	NPT	Three Phase Inverter	1200 V	50 A	284 W	3V @ 15V, 50A	100 µA	3.475 nF @ 30 V	Standard	No	150°C (TJ)	Chassis Mount
APT200GN60JDQ4G IGBT MOD 600V 283A 682W ISOTOP Microsemi Corporation	3,103	-	立即询盘	规格书	Tube	-	Discontinued at Mosen	Trench Field Stop	Single	600 V	283 A	682 W	1.85V @ 15V, 200A	50 µA	14.1 nF @ 25 V	Standard	No	-55°C ~ 175°C (TJ)	Chassis Mount